Herein, we investigate the electrical as well as optical properties of single-layer and multi-layer MoS 2-based phototransistors and demonstrate improved optical properties of multi-layer MoS 2 phototransistor through the use of see-through metal electrode instead of the traditional global bottom gate or patterned local bottom gate structures. However, MoS 2 demonstrates thickness-dependent energy bandgap properties, with multi-layer MoS 2 having indirect bandgap characteristics and therefore possess inferior optical properties. Usually, the higher density of state and relatively narrow bandgap of multi-layer MoS 2 give it an edge over monolayer MoS 2 for phototransistor applications. In recent years, MoS 2 has emerged as a prime material for photodetector as well as phototransistor applications.
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